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IRFIBF20G
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IRFIBF20G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220
Polarity
N-CH
Power Dissipation
30 W
Drain to Source Voltage (Vds)
900 V
Continuous Drain Current (Ids)
1.2A
Rise Time
21 ns
Input Capacitance (Ciss)
490pF @25V(Vds)
Fall Time
32 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
30000 mW

IRFIBF20G Documents

VISHAY
8 Pages / 1.67 MByte

IRFIBF20 Documents

VISHAY
TO-220-3 N-CH 900V 1.2A 8Ω
Vishay Semiconductor
VISHAY IRFIBF20GPBF Power MOSFET, N Channel, 1.2A, 900V, 8Ω, 10V, 4V
VISHAY
TO-220FP N-CH 900V 1.2A
Vishay Siliconix
MOSFET N-CH 900V 1.2A TO220FP
Vishay Siliconix
MOSFET N-CH 900V 1.2A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 900V 1.2A 3Pin(3+Tab) TO-220FP
International Rectifier
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagey
Vishay Intertechnology
Power Field-Effect Transistor, 1.2A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3
Vishay Intertechnology
Power Field-Effect Transistor, 1.2A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
IRF
Power MOSFET(Vdss=900V, Rds(on)=8Ω, Id=1.2A)
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