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Part Datasheet Search > MOSFETs > Infineon > IRFIZ24EPBF Datasheet PDF
IRFIZ24EPBF
$ 18.459
IRFIZ24EPBF Datasheet PDF (9 Pages)
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IRFIZ24EPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Polarity
N-CH
Power Dissipation
29 W
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
14A
Rise Time
34 ns
Input Capacitance (Ciss)
370pF @25V(Vds)
Fall Time
27 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
29W (Tc)

IRFIZ24EPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Size-Length
10 mm
Size-Width
4.4 mm
Size-Height
15.65 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFIZ24EPBF Documents

Infineon
9 Pages / 0.21 MByte

IRFIZ24 Documents

Vishay Siliconix
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Infineon
Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3
Fairchild
Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Infineon
TO-220FP N-CH 55V 14A
VISHAY
TO-220-3 N-CH 60V 14A 100mΩ
International Rectifier
Trans MOSFET N-CH 55V 14A 3Pin(3+Tab) TO-220FP Tube
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(3+Tab) TO-220FP
Infineon
TO-220 N-CH 60V 14A
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