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IRFIZ34N
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IRFIZ34N Datasheet PDF (8 Pages)
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IRFIZ34N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
55.0 V
Current Rating
19.0 A
Polarity
N-Channel
Power Dissipation
31.0 W
Part Family
IRFIZ34N
Drain to Source Voltage (Vds)
55.0 V
Breakdown Voltage (Drain to Source)
55.0 V
Continuous Drain Current (Ids)
21.0 A
Rise Time
49.0 ns

IRFIZ34N Documents

International Rectifier
8 Pages / 0.08 MByte

IRFIZ34 Documents

Vishay Siliconix
Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3
Infineon
Power Field-Effect Transistor, 21A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Fairchild
Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Vishay Intertechnology
Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
TO-220FP N-CH 55V 21A
VISHAY
TO-220-3 N-CH 60V 37A 18mΩ
International Rectifier
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Vishay Semiconductor
Trans MOSFET N-CH 60V 20A 3Pin(3+Tab) TO-220FP
International Rectifier
MOSFET N-CH 55V 21A TO220FP
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