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IRFP150PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-247

Description:

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.055Ω; ID 41A; TO-247AC; PD 230W; VGS +/-20V

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Documentation:

IRFP150PBF Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRFP150PBF Datasheet PDF (9 Pages)

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IRFP150PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

100 V

Current Rating

41.0 A

Case/Package

TO-247

Power Rating

180 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.055 Ω

Polarity

N-Channel

Power Dissipation

230 W

Threshold Voltage

2 V

Input Capacitance

2800pF @25V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

41.0 A

Rise Time

120 ns

Input Capacitance (Ciss)

2800pF @25V(Vds)

Fall Time

81 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

230 W

View Datasheet >

IRFP150PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

15.87 mm

Size-Width

5.31 mm

Size-Height

20.82 mm

Operating Temperature

-55℃ ~ 175℃

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IRFP150PBF Environmental

IRFP150PBF Function Overview

IRFP150PBF Documents

IRFP150PBF Datasheet

Vishay Semiconductor

9 Pages / 1.44 MByte

IRFP150PBF Other Datasheet PDF

Vishay Semiconductor

9 Pages / 1.44 MByte

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Harris

Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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Fairchild

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Intersil

40A 100V 0.055Ω N-CH, Si PMOS TO-247

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ST Microelectronics

40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218

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Samsung

Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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