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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFP22N50APBF Datasheet PDF
IRFP22N50APBF
$ 2.747
IRFP22N50APBF Datasheet PDF (9 Pages)
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IRFP22N50APBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Power Dissipation
277000 mW
Rise Time
94 ns
Input Capacitance (Ciss)
3450pF @25V(Vds)
Fall Time
47 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
277W (Tc)

IRFP22N50APBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFP22N50APBF Documents

Vishay Siliconix
9 Pages / 0.3 MByte
Vishay Siliconix
9 Pages / 0.3 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFP22N50 Documents

VISHAY
TO-247-3 N-CH 500V 22A 230mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.23Ω; ID 22A; TO-247AC; PD 277W; VGS +/-30V
Vishay Siliconix
MOSFET N-CH 500V 22A TO-247AC
International Rectifier
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Siliconix
MOSFET N-CH 500V 22A TO-247AC
VISHAY
TO-247AC N-CH 500V 22A
International Rectifier
MOSFET N-CH 500V 22A TO-247AC
Vishay Intertechnology
Power Field-Effect Transistor, 22A I(D), 500V, 0.23Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.23Ω; ID 22A; TO-247AC; PD 277W; VGS +/-30V
Vishay Semiconductor
Trans MOSFET N-CH 500V 22A 3Pin(3+Tab) TO-247AC
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