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IRFPG30PBF Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

TO-247-3

Description:

MOSFET N-CH 1000V 3.1A TO-247AC

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IRFPG30PBF Datasheet PDF (9 Pages)

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IRFPG30PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Case/Package

TO-247-3

Drain to Source Resistance (on) (Rds)

5 Ω

Power Dissipation

125W (Tc)

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

1000 V

Input Capacitance (Ciss)

980pF @25V(Vds)

Power Dissipation (Max)

125W (Tc)

IRFPG30PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Size-Length

15.87 mm

Size-Width

5.31 mm

Size-Height

20.82 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

IRFPG30PBF Environmental

IRFPG30PBF Function Overview

IRFPG30PBF Documents

IRFPG30PBF Other Datasheet PDF

Vishay Siliconix

9 Pages / 1.69 MByte

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Power MOSFET(Vdss=1000V, Rds(on)=5Ω, Id=3.1A)

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TO-247-3 N-CH 1000V 3.1A 5Ω

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MOSFET N-CH 1000V 3.1A TO-247AC

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Vishay Intertechnology

Power Field-Effect Transistor, 3.1A I(D), 1000V, 5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT PACKAGE-3

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