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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRFR9110TRPBF Datasheet PDF
IRFR9110TRPBF
$ 0.267
IRFR9110TRPBF Datasheet PDF (11 Pages)
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IRFR9110TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.2 Ω
Polarity
P-Channel
Power Dissipation
25 W
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
-3.10 A
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
25 W

IRFR9110TRPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm

IRFR9110TRPBF Documents

Vishay Semiconductor
11 Pages / 0.11 MByte
Vishay Semiconductor
11 Pages / 0.76 MByte
Vishay Semiconductor
2 Pages / 0.15 MByte

IRFR9110 Documents

Intersil
3.1A, 100V, 1.2Ω, P-Channel Power MOSFETs
Vishay Siliconix
MOSFET P-CH 100V 3.1A DPAK
Fairchild
Trans MOSFET P-CH 100V 3.1A 3Pin TO-252
VISHAY
MOSFET P-CH 100V 3.1A DPAK
Vishay Semiconductor
Trans MOSFET P-CH 100V 3.1A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Samsung
Power Field-Effect Transistor, 3.2A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
VISHAY
TO-252-3P-CH 100V 3.1A 1.2Ω
VISHAY
TO-252-3P-CH 100V 3.1A 1.2Ω
Vishay Siliconix
MOSFET P-CH 100V 3.1A DPAK
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