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Part Datasheet Search > MOSFETs > Infineon > IRFSL3206PBF Datasheet PDF
IRFSL3206PBF
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IRFSL3206PBF Datasheet PDF (12 Pages)
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IRFSL3206PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Power Rating
300 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
2.4 mΩ
Polarity
N-CH
Power Dissipation
300 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
210A
Rise Time
82 ns
Input Capacitance (Ciss)
6540pF @50V(Vds)
Fall Time
83 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)

IRFSL3206PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
9.65 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFSL3206PBF Documents

Infineon
12 Pages / 0.31 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
1 Pages / 0.12 MByte

IRFSL3206 Documents

Infineon
TO-262 N-CH 60V 210A
Infineon
TO-262 N-CH 60V 210A
International Rectifier
Trans MOSFET N-CH 60V 210A 3Pin(3+Tab) TO-262 Tube
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