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IRFU014PBF
$ 0.839
IRFU014PBF Datasheet PDF (11 Pages)
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IRFU014PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-251-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
7.70 A
Rise Time
50 ns
Input Capacitance (Ciss)
300pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
19 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5 W

IRFU014PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.39 mm
Size-Height
6.22 mm
Lead Length
9.65 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

IRFU014PBF Documents

VISHAY
11 Pages / 0.85 MByte
VISHAY
11 Pages / 0.84 MByte
VISHAY
4 Pages / 0.23 MByte

IRFU014 Documents

VISHAY
IPAK N-CH 60V 7.7A
International Rectifier
Power MOSFET(Vdss = 60V, Rds(on) = 0.2Ω, Id= 7.7A)
Vishay Siliconix
MOSFET N-CH 60V 7.7A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 60V 7.7A 3Pin(3+Tab) IPAK
Samsung
N-CHANNEL POWER MOSFET
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Fairchild
Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Kersemi Electronic
Power MOSFET
VISHAY
TO-251-3 N-CH 60V 7.7A 200mΩ
Vishay Semiconductor
Trans MOSFET N-CH 60V 7.7A 3Pin(3+Tab) IPAK
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