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Part Datasheet Search > IGBTs > Infineon > IRGS4615DPBF Datasheet PDF
IRGS4615DPBF
$ 0.718
IRGS4615DPBF Datasheet PDF (13 Pages)
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IRGS4615DPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Rating
99 W
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
99 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
60 ns
Input Power (Max)
99 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
99 W

IRGS4615DPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-40℃ ~ 175℃ (TJ)

IRGS4615DPBF Documents

Infineon
13 Pages / 0.3 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.07 MByte

IRGS4615 Documents

Infineon
INFINEON IRGS4615DPBF IGBT Single Transistor, 23A, 1.55V, 99W, 600V, TO-263, 3Pins
International Rectifier
INTERNATIONAL RECTIFIER IRGS4615DPBF IGBT Single Transistor, 23A, 1.55V, 99W, 600V, TO-263, 3Pins
Infineon
Trans IGBT Chip N-CH 600V 23A 99000mW 3Pin(2+Tab) D2PAK T/R
Infineon
Trans IGBT Chip N-CH 600V 23A 99000mW 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 23A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans IGBT Chip N-CH 600V 23A 3Pin(2+Tab) D2PAK T/R
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