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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRLD014PBF Datasheet PDF
IRLD014PBF
$ 0.743
IRLD014PBF Datasheet PDF (8 Pages)
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IRLD014PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Power Dissipation
1300 mW
Rise Time
110 ns
Input Capacitance (Ciss)
400pF @25V(Vds)
Fall Time
26 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1.3W (Ta)

IRLD014PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLD014PBF Documents

Vishay Siliconix
8 Pages / 1.68 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRLD014 Documents

Vishay Siliconix
MOSFET N-CH 60V 1.7A 4-DIP
Vishay Semiconductor
MOSFET N-CH 60V 1.7A 4-DIP
VISHAY
HVMDIP N-CH 60V 1.7A
IRF
POWER MOSFEET
VISHAY
HVMDIP-4 N-CH 60V 1.7A 200mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 1.7A; HD-1; PD 1.3W; VGS +/-10V; VF 1.
Vishay Siliconix
MOSFET N-CH 60V 1.7A 4-DIP
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 1.7A; HD-1; PD 1.3W; VGS +/-10V; VF 1.
Vishay Intertechnology
Power Field-Effect Transistor, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
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