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Part Datasheet Search > MOSFETs > Vishay Precision Group > IRLD014PBF Datasheet PDF
IRLD014PBF
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IRLD014PBF Datasheet PDF (3 Pages)
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IRLD014PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
4 Pin
Drain to Source Resistance (on) (Rds)
0.28 Ω
Power Dissipation
1.3 W
Input Capacitance
400pF @25V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRLD014PBF Documents

Vishay Precision Group
3 Pages / 0.66 MByte

IRLD014 Documents

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Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 1.7A; HD-1; PD 1.3W; VGS +/-10V; VF 1.
Vishay Intertechnology
Power Field-Effect Transistor, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HD-1, 4Pin
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