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Part Datasheet Search > MOSFETs > International Rectifier > IRLH5030TRPBF Datasheet PDF
IRLH5030TRPBF
Part 3D Model
$ 0.818

IRLH5030TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PQFN-8
Drain to Source Resistance (on) (Rds)
9.9 mΩ
Polarity
N-Channel
Power Dissipation
3.6 W
Part Family
IRLH5030
Threshold Voltage
2.5 V
Input Capacitance
5185pF @50V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
100 A
Thermal Resistance
35℃/W (RθJA)
Input Capacitance (Ciss)
5185pF @50V(Vds)
Input Power (Max)
3.6 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRLH5030TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.15 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

IRLH5030TRPBF Documents

International Rectifier
8 Pages / 0.24 MByte
International Rectifier
8 Pages / 0.24 MByte

IRLH5030 Documents

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100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package
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PQFN N-CH 100V 13A
International Rectifier
MOSFET N-CH 100V 13A 8VQFN
Infineon
PQFN N-CH 100V 13A
International Rectifier
MOSFET N-CH 100V 13A 8VQFN
Infineon
Trans MOSFET N-CH 100V 13A 8Pin PQFN T/R
International Rectifier
Hexfet Power Mosfet
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