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Part Datasheet Search > MOSFETs > Infineon > IRLI530N Datasheet PDF
IRLI530N
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IRLI530N Datasheet PDF (9 Pages)
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IRLI530N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
100 V
Current Rating
15.0 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
100 mΩ (max)
Polarity
N-Channel
Power Dissipation
41W (Tc)
Part Family
IRLI530N
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100V (min)
Continuous Drain Current (Ids)
12.0 A
Rise Time
53.0 ns
Input Capacitance (Ciss)
800pF @25V(Vds)
Power Dissipation (Max)
41W (Tc)

IRLI530N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLI530N Documents

Infineon
9 Pages / 0.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRLI530 Documents

Infineon
TO-220FP N-CH 100V 12A
VISHAY
Trans MOSFET N-CH 100V 9.7A 3Pin(3+Tab) TO-220 Full-Pak
International Rectifier
Trans MOSFET N-CH 100V 12A 3Pin(3+Tab) TO-220FP Tube
International Rectifier
MOSFET N-CH 100V 9.7A TO220FP
International Rectifier
MOSFET N-CH 100V 12A TO220FP
Vishay Siliconix
MOSFET N-CH 100V 9.7A TO220FP
Infineon
TO-220FP N-CH 100V 12A
Vishay Semiconductor
Trans MOSFET N-CH 100V 9.7A 3Pin(3+Tab) TO-220 Full-Pak
Vishay Siliconix
MOSFET N-CH 100V 9.7A TO220FP
VISHAY
TO-220 N-CH 100V 9.7A
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