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Part Datasheet Search > MOSFETs > VISHAY > IRLI640GPBF Datasheet PDF
IRLI640GPBF
$ 1.667
IRLI640GPBF Datasheet PDF (8 Pages)
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IRLI640GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
180 mΩ
Polarity
N-Channel
Power Dissipation
40 W
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
9.90 A
Rise Time
83 ns
Input Capacitance (Ciss)
1800pF @25V(Vds)
Input Power (Max)
40 W
Fall Time
52 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
40 W

IRLI640GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Height
9.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRLI640GPBF Documents

VISHAY
8 Pages / 1.67 MByte
VISHAY
8 Pages / 1.67 MByte

IRLI640 Documents

International Rectifier
HEXFET power mosfet
IRF
Power MOSFET(Vdss=200V, Rds(on)=0.18Ω, Id=9.9A)
VISHAY
TO-220-3 N-CH 200V 9.9A 180mΩ
Vishay Siliconix
MOSFET N-CH 200V 9.9A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 200V 9.9A 3Pin(3+Tab) TO-220FP
International Rectifier
MOSFET N-CH 200V 9.9A TO220FP
Vishay Siliconix
MOSFET N-CH 200V 9.9A TO220FP
International Rectifier
MOSFET N-CH 200V 9.9A TO220FP
Vishay Intertechnology
Power Field-Effect Transistor, 9.9A I(D), 200V, 0.18Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3
Vishay Semiconductor
MOSFET N-CH 200V 9.9A TO220FP
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