IRLIB4343PBF Datasheet PDF - Infineon

●The IRLIB4343PBF is a HEXFET® N-channel MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device.

● Advanced process technology

● Low RDS (ON) for improved efficiency

● Low Qg and Qsw for better THD and improved efficiency

● Low Qrr for better THD and lower EMI

● Repetitive avalanche capability for robustness and reliability