IRLMS2002PBF Datasheet PDF - Infineon

●The IRLMS2002PBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized lead-frame produces a HEXFET® power MOSFET. This package is ideal for applications where printed circuit board space is at a premium. It"s unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.

● Ultra-low ON-resistance