IS61WV5128BLL-10TLI Datasheet PDF - Samsung

4Mb, High-Speed/Low Power, Async, 512K x 8, 8ns/3.3V, or 10ns, 2.4V-3.6V, 44Pin TSOP II, RoHS

4Mb, High-Speed/Low Power, Async, 512K x 8, 8ns/3.3V, or 10ns/2.4V-3.6V, 36 Ball mBGA (8x10 mm), RoHS

4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36Pin SOJ (400mil), Leadfree

4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,44Pin TSOP II, Leadfree

Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44

4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36 Ball MBGA (8x10 Mm)

4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36Pin SOJ (400mil), Leadfree

4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36 Ball MBGA (8x10 Mm), Leadfree

SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 36Pin TFBGA T/R