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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFB100N50Q3 Datasheet PDF
IXFB100N50Q3
$ 35.212
IXFB100N50Q3 Datasheet PDF (5 Pages)
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IXFB100N50Q3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-264-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.049 Ω
Polarity
N-Channel
Power Dissipation
1.56 kW
Threshold Voltage
6.5 V
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
100A
Rise Time
20 ns
Input Capacitance (Ciss)
13800pF @25V(Vds)
Input Power (Max)
1560 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1560W (Tc)

IXFB100N50Q3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
20.29 mm
Size-Width
5.31 mm
Size-Height
26.59 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFB100N50Q3 Documents

IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte

IXFB100N50 Documents

IXYS Semiconductor
Trans MOSFET N-CH 500V 100A 3Pin ISOPLUS 264
IXYS Semiconductor
PLUS N-CH 500V 100A
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