$ 0.475

IXFH24N90P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

High Voltage MOS

Case Package:

TO-247-3

Description:

IXYS SEMICONDUCTOR IXFH24N90P Power MOSFET, N Channel, 24A, 900V, 0.42Ω, 10V, 3.5V

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Documentation:

IXFH24N90P Datasheet (4 Pages)

IXFH24N90P Datasheet PDF (4 Pages)

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IXFH24N90P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.42 Ω

Polarity

N-Channel

Power Dissipation

660 W

Threshold Voltage

3.5 V

Input Capacitance

7200 pF

Drain to Source Voltage (Vds)

900 V

Rise Time

40 ns

Input Capacitance (Ciss)

7200pF @25V(Vds)

Input Power (Max)

660 W

Fall Time

38 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

660W (Tc)

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IXFH24N90P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tube

Size-Length

16.26 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFH24N90P Environmental

IXFH24N90P Export Classifications

IXFH24N90P Function Overview

IXFH24N90P Documents

IXFH24N90P Datasheet

IXYS Semiconductor

4 Pages / 0.11 MByte

IXFH24N90P Other Datasheet PDF

IXYS Semiconductor

1 Pages / 0.07 MByte

IXFH24N90 Documents

IXFH24N90P Datasheet PDF

IXYS Semiconductor

IXYS SEMICONDUCTOR IXFH24N90P Power MOSFET, N Channel, 24A, 900V, 0.42Ω, 10V, 3.5V

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