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IXFH30N60Q
$ 10.23
IXFH30N60Q Datasheet PDF (4 Pages)
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IXFH30N60Q Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
500 W
Drain to Source Voltage (Vds)
600 V
Rise Time
32 ns
Input Capacitance (Ciss)
4700pF @25V(Vds)
Fall Time
16 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500W (Tc)

IXFH30N60Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH30N60Q Documents

IXYS Semiconductor
4 Pages / 0.57 MByte

IXFH30N60 Documents

IXYS Semiconductor
Single N-Channel 600V 500W 82NC Through Hole Power Mosfet - TO-247
IXYS Semiconductor
Trans MOSFET N-CH 600V 30A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Mosfet n-Ch 600V 30A To-247ad
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