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IXFH6N100 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-247-3

Description:

Trans MOSFET N-CH 1kV 6A 3Pin(3+Tab) TO-247AD

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Documentation:

IXFH6N100 Datasheet (4 Pages)

IXFH6N100 Datasheet PDF (4 Pages)

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IXFH6N100 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

1.00 kV

Current Rating

6.00 A

Case/Package

TO-247-3

Power Rating

180 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

2 Ω

Polarity

N-Channel

Power Dissipation

180 W

Threshold Voltage

4.5 V

Drain to Source Voltage (Vds)

1 kV

Continuous Drain Current (Ids)

6.00 A

Rise Time

40 ns

Input Capacitance (Ciss)

2600pF @25V(Vds)

Input Power (Max)

180 W

Fall Time

60 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

180W (Tc)

View Datasheet >

IXFH6N100 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFH6N100 Environmental

IXFH6N100 Export Classifications

IXFH6N100 Function Overview

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IXFH6N100 Datasheet

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4 Pages / 0.07 MByte

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