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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFH6N100Q Datasheet PDF
IXFH6N100Q
$ 5.517
IXFH6N100Q Datasheet PDF (2 Pages)
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IXFH6N100Q Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Power Dissipation
180 W
Drain to Source Voltage (Vds)
1000 V
Input Capacitance (Ciss)
2200pF @25V(Vds)
Power Dissipation (Max)
180W (Tc)

IXFH6N100Q Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Size-Width
5.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFH6N100Q Documents

IXYS Semiconductor
2 Pages / 0.11 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXFH6N100 Documents

IXYS Semiconductor
Trans MOSFET N-CH 1kV 6A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
TO-247AD N-CH 1000V 6A
IXYS Semiconductor
Trans MOSFET N-CH 1kV 6A 3Pin(3+Tab) TO-247AD
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