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IXFN180N10 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

Trans MOSFET N-CH 100V 180A 4Pin SOT-227B

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

IXFN180N10 Datasheet (4 Pages)

IXFN180N10 Datasheet PDF (4 Pages)

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IXFN180N10 Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Number of Pins

4 Pin

Case/Package

SOT-227-4

Number of Channels

1 Channel

Number of Positions

4 Position

Drain to Source Resistance (on) (Rds)

0.008 Ω

Polarity

N-Channel

Power Dissipation

600 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

180 A

Rise Time

90 ns

Isolation Voltage

2.50 kV

Input Capacitance (Ciss)

9100pF @25V(Vds)

Input Power (Max)

600 W

Fall Time

65 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

600W (Tc)

View Datasheet >

IXFN180N10 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Material

Silicon

Size-Length

38.23 mm

Size-Width

25.42 mm

Size-Height

9.6 mm

Weight

42.0 g

Operating Temperature

-55℃ ~ 150℃ (TJ)

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