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IXFN26N120P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 1200V 23A

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

IXFN26N120P Datasheet (4 Pages)

IXFN26N120P Datasheet PDF (4 Pages)

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IXFN26N120P Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Case/Package

SOT-227-4

Polarity

N-CH

Power Dissipation

695W (Tc)

Drain to Source Voltage (Vds)

1200 V

Continuous Drain Current (Ids)

23A

Input Capacitance (Ciss)

14000pF @25V(Vds)

Input Power (Max)

695 W

Power Dissipation (Max)

695W (Tc)

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IXFN26N120P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFN26N120P Environmental

IXFN26N120P Function Overview

IXFN26N120P Documents

IXFN26N120P Datasheet

IXYS Semiconductor

4 Pages / 0.11 MByte

IXFN26N120P Other Datasheet PDF

IXYS Semiconductor

14 Pages / 0.74 MByte

IXFN26N120 Documents

IXFN26N120P Datasheet PDF

IXYS Semiconductor

SOT-227B N-CH 1200V 23A

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