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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN32N100Q3 Datasheet PDF
IXFN32N100Q3
$ 55.912
IXFN32N100Q3 Datasheet PDF (6 Pages)
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IXFN32N100Q3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-227-4
Polarity
N-CH
Power Dissipation
780W (Tc)
Drain to Source Voltage (Vds)
1000 V
Continuous Drain Current (Ids)
28A
Rise Time
15 ns
Input Capacitance (Ciss)
9940pF @25V(Vds)
Input Power (Max)
780 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
780W (Tc)

IXFN32N100Q3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN32N100Q3 Documents

IXYS Semiconductor
6 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXFN32N100 Documents

IXYS Semiconductor
SOT-227B N-CH 1000V 28A
IXYS Semiconductor
Trans MOSFET N-CH 1kV 27A 4Pin SOT-227B
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