$ 48.368

IXFN36N110P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

SOT-227B N-CH 1100V 36A

Pictures:

3D Model

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Product Pictures

Documentation:

IXFN36N110P Datasheet (4 Pages)

IXFN36N110P Datasheet PDF (4 Pages)

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IXFN36N110P Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Case/Package

SOT-227-4

Polarity

N-CH

Power Dissipation

1000W (Tc)

Drain to Source Voltage (Vds)

1100 V

Continuous Drain Current (Ids)

36A

Input Capacitance (Ciss)

23000pF @25V(Vds)

Input Power (Max)

1000 W

Power Dissipation (Max)

1000W (Tc)

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IXFN36N110P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFN36N110P Environmental

IXFN36N110P Function Overview

IXFN36N110P Documents

IXFN36N110P Datasheet

IXYS Semiconductor

4 Pages / 0.11 MByte

IXFN36N110P Other Datasheet PDF

IXYS Semiconductor

4 Pages / 0.1 MByte

IXFN36N110 Documents

IXFN36N110P Datasheet PDF

IXYS Semiconductor

SOT-227B N-CH 1100V 36A

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