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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN48N55 Datasheet PDF
IXFN48N55
$ 25.49

IXFN48N55 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Case/Package
SOT-227-4
Polarity
N-CH
Power Dissipation
600W (Tc)
Drain to Source Voltage (Vds)
550 V
Continuous Drain Current (Ids)
48A
Input Capacitance (Ciss)
8900pF @25V(Vds)
Power Dissipation (Max)
600W (Tc)

IXFN48N55 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN48N55 Documents

IXYS Semiconductor
2 Pages / 0.07 MByte
IXYS Semiconductor
2 Pages / 0.07 MByte

IXFN48 Documents

IXYS Semiconductor
SOT-227B N-CH 500V 48A
IXYS Semiconductor
Trans MOSFET N-CH 600V 40A 4Pin SOT-227B
IXYS Semiconductor
Trans MOSFET N-CH 500V 48A 4Pin SOT-227B
IXYS Semiconductor
SOT-227B N-CH 500V 48A
IXYS Semiconductor
Trans MOSFET N-CH 500V 48A 4Pin SOT-227B
IXYS Semiconductor
SOT-227B N-CH 550V 48A
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