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IXFN80N50P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

Trans MOSFET N-CH 500V 66A 4Pin SOT-227B

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Documentation:

IXFN80N50P Datasheet (5 Pages)

IXFN80N50P Datasheet PDF (5 Pages)

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IXFN80N50P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Voltage Rating (DC)

500 V

Current Rating

80.0 A

Case/Package

SOT-227-4

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

65 mΩ

Polarity

N-Channel

Power Dissipation

700 W

Gate Charge

195 nC

Drain to Source Voltage (Vds)

500 V

Breakdown Voltage (Drain to Source)

500 V

Continuous Drain Current (Ids)

80.0 A

Rise Time

27 ns

Input Capacitance (Ciss)

12700pF @25V(Vds)

Input Power (Max)

700 W

Fall Time

18 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

700000 mW

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IXFN80N50P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

38.2 mm

Size-Width

25.07 mm

Size-Height

9.6 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFN80N50P Environmental

IXFN80N50P Function Overview

IXFN80N50P Documents

IXFN80N50P Datasheet

IXYS Semiconductor

5 Pages / 0.15 MByte

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Littelfuse

Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN

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