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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFR64N60Q3 Datasheet PDF
IXFR64N60Q3
$ 32.099
IXFR64N60Q3 Datasheet PDF (6 Pages)
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IXFR64N60Q3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
104 mΩ
Polarity
N-CH
Power Dissipation
568 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
42A
Rise Time
300 ns
Input Capacitance (Ciss)
9930pF @25V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
568W (Tc)

IXFR64N60Q3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFR64N60Q3 Documents

IXYS Semiconductor
6 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.14 MByte

IXFR64N60 Documents

IXYS Semiconductor
ISOPLUS N-CH 600V 36A
IXYS Semiconductor
ISOPLUS N-CH 600V 42A
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