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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFT12N100 Datasheet PDF
IXFT12N100
$ 14.231

IXFT12N100 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-268-3
Polarity
N-CH
Power Dissipation
300W (Tc)
Drain to Source Voltage (Vds)
1000 V
Continuous Drain Current (Ids)
12A
Input Capacitance (Ciss)
4000pF @25V(Vds)
Power Dissipation (Max)
300W (Tc)

IXFT12N100 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFT12N100 Documents

IXYS Semiconductor
4 Pages / 0.54 MByte
IXYS Semiconductor
4 Pages / 0.54 MByte

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