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IXFT12N100F Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

TO-268 N-CH 1000V 12A

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

IXFT12N100F Datasheet (3 Pages)

IXFT12N100F Datasheet PDF (3 Pages)

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IXFT12N100F Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

TO-268-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

1.05 Ω

Polarity

N-CH

Power Dissipation

300 W

Drain to Source Voltage (Vds)

1000 V

Breakdown Voltage (Drain to Source)

1000 V

Continuous Drain Current (Ids)

12A

Rise Time

9.8 ns

Input Capacitance (Ciss)

2700pF @25V(Vds)

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

300W (Tc)

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IXFT12N100F Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Size-Length

16.05 mm

Size-Width

14 mm

Size-Height

5.1 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFT12N100F Environmental

IXFT12N100F Function Overview

IXFT12N100F Documents

IXFT12N100F Datasheet

IXYS Semiconductor

3 Pages / 0.1 MByte

IXFT12N100F Other Datasheet PDF

IXYS Semiconductor

2 Pages / 0.38 MByte

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IXFT12N100 Datasheet PDF

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TO-268 N-CH 1000V 12A

IXFT12N100Q Datasheet PDF

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TO-268 N-CH 1000V 12A

IXFT12N100F Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 1000V 12A

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