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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX180N10 Datasheet PDF
IXFX180N10
$ 15.385
IXFX180N10 Datasheet PDF (5 Pages)
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IXFX180N10 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
180 A
Case/Package
TO-247-3
Drain to Source Resistance (on) (Rds)
8.00 mΩ
Polarity
N-CH
Power Dissipation
560 W
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
180 A
Rise Time
90 ns
Input Capacitance (Ciss)
10900pF @25V(Vds)
Input Power (Max)
560 W
Fall Time
65 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
560W (Tc)

IXFX180N10 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFX180N10 Documents

IXYS Semiconductor
5 Pages / 0.14 MByte
IXYS Semiconductor
4 Pages / 0.1 MByte

IXFX180 Documents

IXYS Semiconductor
PLUS N-CH 100V 180A
IXYS Semiconductor
N-Channel 250V 180A 12.9mΩ Through Hole GigaMOS Power Mosfet - PLUS247
IXYS Semiconductor
PLUS N-CH 70V 180A
IXYS Semiconductor
Trans MOSFET N-CH 150V 180A 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
PLUS N-CH 85V 180A
Littelfuse
Power Field-Effect Transistor,
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