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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX26N90 Datasheet PDF
IXFX26N90
$ 18.842

IXFX26N90 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
300 mΩ
Power Dissipation
560 W
Drain to Source Voltage (Vds)
900 V
Breakdown Voltage (Drain to Source)
900 V
Rise Time
35 ns
Input Capacitance (Ciss)
10800pF @25V(Vds)
Fall Time
24 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
560W (Tc)

IXFX26N90 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFX26N90 Documents

IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
4 Pages / 0.12 MByte

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