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IXFX32N80Q3 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-247-3

Description:

PLUS N-CH 800V 32A

Pictures:

3D Model

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Product Pictures

Documentation:

IXFX32N80Q3 Datasheet (6 Pages)

IXFX32N80Q3 Datasheet PDF (6 Pages)

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IXFX32N80Q3 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

270 mΩ

Polarity

N-CH

Power Dissipation

1 kW

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Continuous Drain Current (Ids)

32A

Rise Time

300 ns

Input Capacitance (Ciss)

6940pF @25V(Vds)

Input Power (Max)

1000 W

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1000W (Tc)

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IXFX32N80Q3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

16.13 mm

Size-Width

5.21 mm

Size-Height

21.34 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXFX32N80Q3 Environmental

IXFX32N80Q3 Function Overview

IXFX32N80Q3 Documents

IXFX32N80Q3 Datasheet

IXYS Semiconductor

6 Pages / 0.12 MByte

IXFX32N80Q3 Other Datasheet PDF

IXYS Semiconductor

5 Pages / 0.11 MByte

IXFX32N80 Documents

IXFX32N80Q3 Datasheet PDF

IXYS Semiconductor

PLUS N-CH 800V 32A

IXFX32N80P Datasheet PDF

IXYS Semiconductor

Trans MOSFET N-CH 800V 32A 3Pin(3+Tab) PLUS 247

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