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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH20N120A3 Datasheet PDF
IXGH20N120A3
$ 1.02
IXGH20N120A3 Datasheet PDF (6 Pages)
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IXGH20N120A3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
180 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
180 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
180 W

IXGH20N120A3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃

IXGH20N120A3 Documents

IXYS Semiconductor
6 Pages / 0.22 MByte
IXYS Semiconductor
6 Pages / 0.23 MByte

IXGH20N120 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 40A 150000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 40A 180000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 40A 190000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 40A 190000mW 3Pin(3+Tab) TO-247AD
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