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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGK50N60A2U1 Datasheet PDF
IXGK50N60A2U1
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IXGK50N60A2U1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-264-3
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
400 W

IXGK50N60A2U1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGK50N60A2U1 Documents

IXYS Semiconductor
6 Pages / 0.14 MByte
IXYS Semiconductor
6 Pages / 0.14 MByte

IXGK50N60A2 Documents

IXYS Semiconductor
IGBT 600V 75A 400W TO264AA
IXYS Semiconductor
Low-Frequency Range (DC-15kHz), Low Vcesat w/ Diode
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