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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGR60N60B2 Datasheet PDF
IXGR60N60B2
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IXGR60N60B2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
250 W
Rise Time
100 ns
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
250 W
Operating Temperature (Max)
150 ℃

IXGR60N60B2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGR60N60B2 Documents

IXYS Semiconductor
6 Pages / 0.6 MByte
IXYS Semiconductor
6 Pages / 0.49 MByte

IXGR60N60 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60C3C1 IGBT Single Transistor, SIC, 75A, 2.5V, 170W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 170000mW 3Pin(3+Tab) ISOPLUS 247
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60C2 IGBT Single Transistor, 75A, 2.7V, 250W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60B2 IGBT Single Transistor, Isolated, 75A, 2V, 250W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60B2D1 IGBT Single Transistor, Isolated, 75A, 2V, 250W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGR60N60C2D1 IGBT Single Transistor, Isolated, 75A, 2.7V, 250W, 600V, TO-247AD, 3Pins
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 3Pin(3+Tab) ISOPLUS 247
IXYS Semiconductor
IGBT 600V 75A ISOPLUS247
IXYS Semiconductor
High-Frequency Range (>40kHz), C-IGBT w/Diode
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