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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGT32N170 Datasheet PDF
IXGT32N170
$ 39.715

IXGT32N170 Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
IGBTs
Case Package:
TO-268-3
Description:
Trans IGBT Chip N-CH 1700V 75A 350000mW 3Pin(2+Tab) TO-268
Pictures:
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Product Pictures
Documentation:
IXGT32N170 Datasheet (5 Pages)
IXGT32N170 Datasheet PDF (5 Pages)
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IXGT32N170 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-268-3
Power Dissipation
350 W
Breakdown Voltage (Collector to Emitter)
1700 V
Input Power (Max)
350 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350000 mW
View Datasheet >

IXGT32N170 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.05 mm
Size-Width
14 mm
Size-Height
5.1 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

IXGT32N170 Documents

IXGT32N170 Datasheet
IXYS Semiconductor
5 Pages / 0.56 MByte

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