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IXKT70N60C5 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

MOSFET P-CH 600V 68A TO-268

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Documentation:

IXKT70N60C5 Datasheet (5 Pages)

IXKT70N60C5 Datasheet PDF (5 Pages)

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IXKT70N60C5 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

TO-268-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

40 mΩ

Power Dissipation

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

600 V

Breakdown Voltage (Drain to Source)

600 V

Rise Time

20 ns

Input Capacitance (Ciss)

6800pF @100V(Vds)

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

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IXKT70N60C5 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

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IXKT70N60C5 Environmental

IXKT70N60C5 Documents

IXKT70N60C5 Datasheet

IXYS Semiconductor

5 Pages / 0.1 MByte

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IXKT70N60C5 Datasheet PDF

IXYS Semiconductor

MOSFET P-CH 600V 68A TO-268

IXKT70N60C5-TRL Datasheet PDF

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MOSFET P-CH 600V 68A TO-268

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