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IXSH30N60B2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 600V 48A 250000mW 3Pin(3+Tab) TO-247

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Documentation:

IXSH30N60B2D1 Datasheet (6 Pages)

IXSH30N60B2D1 Datasheet PDF (6 Pages)

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IXSH30N60B2D1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

600 V

Current Rating

48.0 A

Case/Package

TO-247-3

Power Dissipation

250 W

Rise Time

30.0 ns

Breakdown Voltage (Collector to Emitter)

600 V

Reverse recovery time

30 ns

Input Power (Max)

250 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

250000 mW

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IXSH30N60B2D1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Bulk

Size-Length

16.26 mm

Size-Width

5.3 mm

Size-Height

21.46 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXSH30N60B2D1 Environmental

IXSH30N60B2D1 Function Overview

IXSH30N60B2D1 Documents

IXSH30N60B2D1 Datasheet

IXYS Semiconductor

6 Pages / 0.5 MByte

IXSH30N60B2D1 Other Datasheet PDF

IXYS Semiconductor

3 Pages / 0.27 MByte

IXSH30N60B2 Documents

IXSH30N60B2D1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 600V 48A 250000mW 3Pin(3+Tab) TO-247

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