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IXTA06N120P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-263-3

Description:

N-Channel 1200V 32Ω 13.3NC Power MOSFET - TO-263

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Documentation:

IXTA06N120P Datasheet (4 Pages)

IXTA06N120P Datasheet PDF (4 Pages)

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IXTA06N120P Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-263-3

Power Dissipation

42 W

Drain to Source Voltage (Vds)

1200 V

Rise Time

24 ns

Input Capacitance (Ciss)

270pF @25V(Vds)

Input Power (Max)

42 W

Fall Time

27 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

42W (Tc)

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IXTA06N120P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTA06N120P Environmental

IXTA06N120P Function Overview

IXTA06N120P Documents

IXTA06N120P Datasheet

IXYS Semiconductor

4 Pages / 0.13 MByte

IXTA06N120 Documents

IXTA06N120 Datasheet PDF

IXYS Semiconductor

MOSFET N-CH 1200V 0.6A TO-263

IXTA06N120P Datasheet PDF

IXYS Semiconductor

N-Channel 1200V 32Ω 13.3NC Power MOSFET - TO-263

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