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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH10N100D Datasheet PDF
IXTH10N100D
$ 16.333

IXTH10N100D Datasheet PDF - IXYS Semiconductor

Manufacturer:
IXYS Semiconductor
Category:
MOSFETs
Case Package:
TO-247-3
Description:
MOSFET N-CH 1000V 10A TO-247
Pictures:
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Product Pictures
Documentation:
IXTH10N100D Datasheet (5 Pages)
IXTH10N100D Datasheet PDF (5 Pages)
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IXTH10N100D Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
1.4 Ω
Power Dissipation
400 W
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1000 V
Rise Time
85 ns
Input Capacitance (Ciss)
2500pF @25V(Vds)
Fall Time
75 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
400W (Tc)
View Datasheet >

IXTH10N100D Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

IXTH10N100D Documents

IXTH10N100D Datasheet
IXYS Semiconductor
5 Pages / 0.13 MByte
IXTH10N100D Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.12 MByte

IXTH10N100 Documents

IXTH10N100D2 Datasheet PDF
IXYS Semiconductor
N-CH 1000V 10A
IXTH10N100D Datasheet PDF
IXYS Semiconductor
MOSFET N-CH 1000V 10A TO-247
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