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IXTH30N60P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-247-3

Description:

N-Channel 600V 30A 0.24Ω Through Hole PolarHV Power Mosfet - TO-247

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Documentation:

IXTH30N60P Datasheet (6 Pages)

Package Outline Dimension on5 Page 6 Page

IXTH30N60P Datasheet PDF (6 Pages)

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IXTH30N60P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Voltage Rating (DC)

600 V

Current Rating

30.0 A

Case/Package

TO-247-3

Power Dissipation

540W (Tc)

Input Capacitance

5.05 nF

Gate Charge

82.0 nC

Drain to Source Voltage (Vds)

600 V

Continuous Drain Current (Ids)

30.0 A

Input Capacitance (Ciss)

5050pF @25V(Vds)

Power Dissipation (Max)

540W (Tc)

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IXTH30N60P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTH30N60P Environmental

IXTH30N60P Function Overview

IXTH30N60P Documents

IXTH30N60P Datasheet

IXYS Semiconductor

6 Pages / 0.34 MByte

IXTH30N60 Documents

IXTH30N60P Datasheet PDF

IXYS Semiconductor

N-Channel 600V 30A 0.24Ω Through Hole PolarHV Power Mosfet - TO-247

IXTH30N60L2 Datasheet PDF

IXYS Semiconductor

IXYS SEMICONDUCTOR IXTH30N60L2 Power MOSFET, LINEAR L2™, N Channel, 30A, 600V, 240mohm, 10V, 2.5V

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