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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTH80N65X2 Datasheet PDF
IXTH80N65X2
$ 10.482
IXTH80N65X2 Datasheet PDF (5 Pages)
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IXTH80N65X2 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.038 Ω
Polarity
N-Channel
Power Dissipation
890 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
650 V
Continuous Drain Current (Ids)
80A
Rise Time
11 ns
Input Capacitance (Ciss)
7753pF @25V(Vds)
Fall Time
7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
890W (Tc)

IXTH80N65X2 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Length
16.13 mm
Size-Width
21.34 mm
Size-Height
5.21 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTH80N65X2 Documents

IXYS Semiconductor
5 Pages / 0.14 MByte

IXTH80N65 Documents

IXYS Semiconductor
TO-247 N-CH 650V 80A
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