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IXTP50N25T
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IXTP50N25T Datasheet PDF (6 Pages)
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IXTP50N25T Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
60 mΩ
Polarity
N-CH
Power Dissipation
400 W
Drain to Source Voltage (Vds)
250 V
Breakdown Voltage (Drain to Source)
250 V
Continuous Drain Current (Ids)
50A
Rise Time
25 ns
Input Capacitance (Ciss)
4000pF @25V(Vds)
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
400W (Tc)

IXTP50N25T Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTP50N25T Documents

IXYS Semiconductor
6 Pages / 0.22 MByte
IXYS Semiconductor
6 Pages / 0.19 MByte

IXTP50N25 Documents

IXYS Semiconductor
TO-220AB N-CH 250V 50A
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