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IXTQ26N50P Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-3-3

Description:

N-Channel 500V 26A 230mΩ Through Hole PolarHV Power Mosfet - TO-3P

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Documentation:

IXTQ26N50P Datasheet (5 Pages)

IXTQ26N50P Datasheet PDF (5 Pages)

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IXTQ26N50P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

500 V

Current Rating

26.0 A

Case/Package

TO-3-3

Power Dissipation

400W (Tc)

Input Capacitance

3.60 nF

Gate Charge

65.0 nC

Drain to Source Voltage (Vds)

500 V

Continuous Drain Current (Ids)

26.0 A

Rise Time

25 ns

Input Capacitance (Ciss)

3600pF @25V(Vds)

Input Power (Max)

400 W

Fall Time

20 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

400W (Tc)

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IXTQ26N50P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTQ26N50P Environmental

IXTQ26N50P Function Overview

IXTQ26N50P Documents

IXTQ26N50P Datasheet

IXYS Semiconductor

5 Pages / 0.33 MByte

IXTQ26N50 Documents

IXTQ26N50P Datasheet PDF

IXYS Semiconductor

N-Channel 500V 26A 230mΩ Through Hole PolarHV Power Mosfet - TO-3P

IXTQ26N50PS Datasheet PDF

IXYS Semiconductor

Discrete MOSFETs: Standard N-channel Types

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