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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTT10N100D Datasheet PDF
IXTT10N100D
$ 19.566
IXTT10N100D Datasheet PDF (5 Pages)
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IXTT10N100D Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-268-3
Power Dissipation
400W (Tc)
Drain to Source Voltage (Vds)
1000 V
Input Capacitance (Ciss)
2500pF @25V(Vds)
Power Dissipation (Max)
400W (Tc)

IXTT10N100D Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXTT10N100D Documents

IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte

IXTT10N100 Documents

IXYS Semiconductor
TO-268 N-CH 1000V 10A
IXYS Semiconductor
Mosfet n-Ch 1000V 10A To-268
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