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IXTT10N100D2 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

TO-268 N-CH 1000V 10A

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Documentation:

IXTT10N100D2 Datasheet (5 Pages)

IXTT10N100D2 Datasheet PDF (5 Pages)

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IXTT10N100D2 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-268-3

Polarity

N-CH

Power Dissipation

695000 mW

Drain to Source Voltage (Vds)

1000 V

Continuous Drain Current (Ids)

10A

Rise Time

36 ns

Input Capacitance (Ciss)

5320pF @25V(Vds)

Fall Time

164 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

695W (Tc)

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IXTT10N100D2 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXTT10N100D2 Environmental

IXTT10N100D2 Function Overview

IXTT10N100D2 Documents

IXTT10N100D2 Datasheet

IXYS Semiconductor

5 Pages / 0.16 MByte

IXTT10N100 Documents

IXTT10N100D2 Datasheet PDF

IXYS Semiconductor

TO-268 N-CH 1000V 10A

IXTT10N100D Datasheet PDF

IXYS Semiconductor

Mosfet n-Ch 1000V 10A To-268

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