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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXXH50N60B3D1 Datasheet PDF
IXXH50N60B3D1
$ 8.616
IXXH50N60B3D1 Datasheet PDF (8 Pages)
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IXXH50N60B3D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
600 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
25 ns
Input Power (Max)
600 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
600000 mW

IXXH50N60B3D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.24 mm
Size-Width
5.3 mm
Size-Height
21.45 mm
Operating Temperature
55℃ ~ 175℃

IXXH50N60B3D1 Documents

IXYS Semiconductor
8 Pages / 0.23 MByte

IXXH50N60B3 Documents

IXYS Semiconductor
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3Pin
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 120A 600000mW 3Pin(3+Tab) TO-247AD
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